Substrate support assembly and substrate processing device including the same

ABSTRACT

A substrate support assembly arranged in a chamber includes: a support plate including a first surface on which a substrate is seated; a driver configured to tilt the support plate such that the first surface is inclined with respect to a reference surface by a lower inclination angle; and a controller configured to control the driver such that the lower inclination angle is adjusted based on an upper inclination angle formed by the inclination of the gas supplier coupled to the upper surface of the chamber with respect to the reference surface.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of U.S. Patent Application No. 62/872,551, filed on Jul. 10, 2019, the disclosure of which is incorporated herein in its entirety by reference.

BACKGROUND 1. Field

One or more embodiments relate to a substrate support assembly and a substrate processing device including the same, and more particularly, to a substrate support assembly capable of forming uniform distances between a substrate and a gas supplier, and a substrate processing device including the substrate support assembly.

2. Description of the Related Art

The size of a semiconductor device is continuously reduced, and accordingly, the importance of precise control of processes that are processed (e.g., deposited) on a substrate is increasing. The substrate processing processes may include, if necessary, steps for maintaining the inside of a reactor of a substrate processing device under vacuum pressure and/or high temperature. An upper surface of a chamber including a plurality of reactors therein may be deformed in a direction toward the inside of the chamber depending on the state (vacuum pressure and/or high temperature) inside the reactor in the substrate processing processes. In addition, the gas supplier coupled to the upper surface of the chamber may also be tilted in the direction toward the inside of the chamber in a deformation direction of the upper surface of the chamber. Thus, distances between a substrate of a reactor and a gas supplier are not uniform in a reaction space of the reactor, and the process uniformity of a substrate processing process may be deteriorated.

SUMMARY

One or more embodiments include a substrate support assembly capable of forming uniform distances between a substrate and a gas supplier to improve the process uniformity of a substrate processing process, and a substrate processing device including the substrate support assembly.

Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments.

According to one or more embodiments, a substrate support assembly arranged in a chamber includes: a support plate including a first surface on which a substrate is seated; a driver configured to tilt the support plate such that the first surface is inclined with respect to a reference surface by a lower inclination angle; and a controller configured to control the driver, wherein the controller is configured to control the driver such that the lower inclination angle is adjusted based on an upper inclination angle caused by the tilting of a gas supplier coupled to an upper surface of the chamber with respect to the reference surface.

In an embodiment, the reference surface may be a bottom surface of the chamber.

In an embodiment, the controller may determine whether a difference value between the lower inclination angle and the upper inclination angle is not within a predefined error range.

In an embodiment, the controller may communicate with at least one of a lower angle sensor configured to measure the lower inclination angle and an upper angle sensor configured to measure the upper inclination angle.

In an embodiment, the driver may include: a motor; a link unit connected to the motor and configured to be driven in a vertical direction; a tilting plate connected to the link unit; and a connecting arm extending from the tilting plate and coupled to the support plate.

In an embodiment, the link unit may include: a first link connected to the motor and configured to be driven in a vertical direction; and a second link connecting the first link and the tilting plate and configured to be tilted with respect to a central axis of the first link, wherein the first link and the second link are joint-coupled.

In an embodiment, the first link and the second link may be coupled to each other by at least one of ball joint coupling and universal joint coupling.

In an embodiment, the link unit may be plural, and each of the link units may be disposed to be equally symmetric with respect to a center of the tilting plate.

In an embodiment, the controller may individually control the motors respectively coupled to the link units.

According to one or more embodiments, a substrate processing device includes: a chamber; a substrate support assembly configured to support a substrate in the chamber; a gas supplier coupled to an upper surface of the chamber and configured to define a reaction space of a reactor together with the substrate support assembly and to supply gas to the reaction space, wherein substrate support assembly includes: a support plate including a first surface on which the substrate is seated; a driver configured to tilt the support plate such that the first surface is inclined with respect to a reference surface by a lower inclination angle; and a controller configured to control the driver, wherein the controller is configured to control the driver such that the lower inclination angle is adjusted based on an upper inclination angle formed by inclining the gas supplier with respect to the reference surface.

In an embodiment, the controller may control the driver such that the lower inclination angle and the upper inclination angle are equal to each other.

In an embodiment, the substrate processing device may further include: a lower angle sensor configured to measure the lower inclination angle, and the controller may communicate with the lower angle sensor.

In an embodiment, the substrate processing device may further include: an upper angle sensor configured to measure the upper inclination angle, and the controller may communicate with the upper angle sensor.

In an embodiment, the substrate processing device may further include: a lower angle sensor configured to measure the lower inclination angle; and an upper angle sensor configured to measure the upper inclination angle, and the controller may determine whether a difference value between the lower inclination angle measured by the lower angle sensor and the upper inclination angle measured by the upper angle sensor is not within a predefined error range.

In an embodiment, the driver may include: a motor; a link unit connected to the motor and configured to be driven in a vertical direction; a tilting plate connected to the link unit; and a connecting arm extending from the tilting plate and coupled to the support plate.

In an embodiment, the link unit may include: a first link connected to the motor and configured to be driven in a vertical direction; and a second link connecting the first link and the tilting plate and configured to be tilted with respect to a central axis of the first link, wherein the first link and the second link are joint-coupled.

In an embodiment, the first link and the second link may be coupled to each other by at least one of ball joint coupling and universal joint coupling.

In an embodiment, the link unit may be plural, and each of the link units may be disposed to be equally symmetric with respect to a center of the tilting plate.

In an embodiment, the controller may individually control the motors respectively coupled to the link units.

In an embodiment, the driver may further include a fixing plate provided with a hole, wherein the fixing plate is between the tilting plate and the motor, and the link unit is connected to the tilting plate through the hole.

A substrate support assembly and a substrate processing device including the same according to the disclosure may form uniform distances between a substrate and a gas supplier such that the process uniformity of a substrate processing process in various environment conditions of the substrate processing process may be improved.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings in which:

FIG. 1 is an internal cross-sectional view of a conventional substrate processing device;

FIG. 2 is a cross-sectional view of a substrate support assembly and a substrate processing device including the same according to an embodiment;

FIG. 3 is a cross-sectional view of a substrate processing device according to an embodiment;

FIG. 4 is a side view of a driver according to an embodiment;

FIG. 5 is a plan view of a fixing plate according to an embodiment;

FIG. 6 is a plan view of a tilting plate according to an embodiment;

FIG. 7 is a cross-sectional view of area A of the driver of FIG. 4 ; and

FIG. 8 is a flowchart illustrating a method of driving a substrate support assembly according to an embodiment.

DETAILED DESCRIPTION

Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figures, to explain aspects of the present description. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list.

Hereinafter, one or more embodiments will be described more fully with reference to the accompanying drawings.

In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Rather, these embodiments are provided so that the disclosure will be thorough and complete, and will fully convey the scope of the disclosure to one of ordinary skill in the art.

The terminology used herein is for the purpose of describing particular embodiments and is not intended to limit the disclosure. As used herein, the singular forms “a”, “an”, and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “includes”, “comprises” and/or “including”, “comprising” used herein specify the presence of stated features, integers, steps, operations, members, components, and/or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, members, components, and/or groups thereof. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, etc. may be used herein to describe various members, components, regions, layers, and/or sections, these members, components, regions, layers, and/or sections should not be limited by these terms. These terms do not denote any order, quantity, or importance, but rather are only used to distinguish one component, region, layer, and/or section from another component, region, layer, and/or section. Thus, a first member, component, region, layer, or section discussed below could be termed a second member, component, region, layer, or section without departing from the teachings of embodiments.

Hereinafter, embodiments of the disclosure will be described with reference to the accompanying drawings. In the drawings, variations from the illustrated shapes may be expected as a result of, for example, manufacturing techniques and/or tolerances. Thus, the embodiments of the disclosure should not be construed as being limited to the particular shapes of regions illustrated herein but may include deviations in shapes that result, for example, from manufacturing processes.

FIG. 1 is an internal cross-sectional view of a conventional substrate processing device 100. The substrate processing device 100 may be a device provided for processing a substrate S. For example, the substrate processing device 100 may be a device for performing deposition on a semiconductor substrate or a display substrate, and may be a device for performing etching on the substrate S and/or a material film on the substrate S.

Referring to FIG. 1 , the conventional substrate processing device 100 may include a chamber 10, a substrate supporter 11, and a gas supplier 12. The chamber 10 may include a bottom surface 10 a, an inner surface 10 b, and an upper surface 10 c that define an inner space of the chamber.

The substrate supporter 11 may be configured to support the substrate S within the chamber 10. The substrate support 11 may be below the gas supplier 12.

The gas supplier 12 may be configured to supply gases for processing the substrate S onto the substrate S. The gas supplier 12 may be above the substrate supporter 11 and may be fixedly coupled to the upper surface 10 c of the chamber 10.

The substrate supporter 11 and the gas supplier 12, which constitute a reactor, may be mutually coupled to define a reaction space R of the reactor. The reaction space R of the reactor may be a space in which the substrate S is processed in a substrate processing process.

The substrate processing device 100 may form various environment conditions in the reaction space R of the reactor for processing the substrate S, if necessary. For example, the substrate processing device 100 may bring the inside of the reaction space R into a vacuum pressure state for processing the substrate S. In addition, the substrate processing device 100 may bring the inside of the reaction space R into a high-temperature state for processing the substrate S. When the inside of the reaction space R of the substrate processing device 100 is in the state of vacuum pressure and/or high temperature, the upper surface 10 c of the chamber 10 may be deformed and tilted toward the inside of the chamber. Accordingly, the gas supplier 12 fixedly coupled to the upper surface 10 c may also be tilted toward the inside of the chamber.

Referring to FIG. 1 , as the upper surface 10 c of the chamber 10 is tilted, the upper surface 10 c and the bottom surface 10 a may form an upper inclination angle a. For example, the upper inclination angle a may be an angle formed by the inclination of the upper surface 10 c of the chamber 10 from the bottom surface 10 a of the chamber 10. Furthermore, the gas supplier 12 coupled to the upper surface 10 c may also be inclined from the bottom surface 10 a to form the upper inclination angle a. As the upper inclination angle a is formed, distances between the substrate S and the gas supplier 12 may be different from region to region of the substrate S. For example, a first distance d1 between the first region P1 of the substrate S and the gas supplier 12 may be greater than a second distance d2 between a second region P2 different from the first region P1 of the substrate S and the gas supplier 12. As the first distance d1 and the second distance d2 are different from each other, the process uniformity of a substrate processing process may be deteriorated.

FIG. 2 is a cross-sectional view of a substrate support assembly 250 and a substrate processing device 200 including the substrate support assembly 250 according to an embodiment. As shown in FIG. 2 , the substrate processing device 200 may include a plurality of substrate support assemblies 250.

Referring to FIG. 2 , the substrate processing device 200 may include a chamber 20, a gas supplier 21, and the substrate support assembly 250. In an embodiment, the chamber 20 may form an inner space in which the substrate support assembly 250 and the gas supplier 21 are located. In addition, the chamber 20 may include a bottom surface 20 a, an inner surface 20 b, and an upper surface 20 c that define the inner space.

In an embodiment, the gas supplier 21 may be configured to supply gases for processing the substrate S onto the substrate S. For example, the gas supplier 21 may be configured to supply various types of process gases for a deposition process onto the substrate S. The gas supplier 21 may be above the substrate support assembly 250 and may be fixed to the chamber 20. In more detail, the gas supplier 21 may be fixed to the upper surface 20 c of the chamber 20 through a fixing member (not shown). Furthermore, the gas supplier 21 may include a shower head having a plurality of gas injection holes on a spray surface facing the substrate S and configured to supply gases for processing the substrate S onto the substrate S.

In an embodiment, the substrate support assembly 250 of the disclosure may include a support plate 201, a driver 202, and a controller 203. The substrate support assembly 250 may be configured to support the substrate S within the chamber 20. Furthermore, the driver 202 of the substrate support assembly 250 may drive the support plate 201 configured to support the substrate S to form the uniform distances between the substrate S and the gas supplier 21.

In an embodiment, the gas supplier 21 and the substrate support assembly 250 in a substrate processing process are mutually coupled to define the reaction space R of the reactor, which is the space in which the substrate S is processed. Depending on the types of substrate processing processes, the inside of the reaction space R may be formed in various pressure distributions and temperature distributions.

In an embodiment, the support plate 201 may be configured such that the substrate S is seated. In more detail, the support plate 201 may include a first surface 201 a facing the gas supplier 21 and the substrate S to be processed may be seated on the first surface 201 a.

Further, the support plate 201 may be tilted by the driver 202, which will be described later below. For example, an angle formed between the first surface 201 a of the support plate 201 and a reference surface may be adjusted by the driver 202. For example, the reference surface may be the bottom surface 20 a of the chamber 20, but is not limited thereto. The reference surface may include any one of surfaces formed by components of the substrate processing device 200, which is not substantially deformed in various environment conditions of the substrate processing process. When the support plate 201 is tilted from the bottom surface 20 a of the chamber 20 by the driver 202, the first surface 201 a of the support plate 201 and the bottom surface 20 a of the chamber 20 may form a lower inclination angle b.

Further, the support plate 201 may serve as an electrode. For example, RF power may be applied to the reaction space R of the reactor through the support plate 201, so that a plasma may be formed in the reaction space R.

In an embodiment, the driver 202 may be configured to drive the support plate 201. In more detail, the driver 202 may drive the support plate 201 such that the first surface 201 a of the support plate 201 is inclined with respect to the reference surface. For example, the driver 202 may drive the support plate 201 such that the lower inclination angle b between the first surface 201 a of the support plate 201 and the bottom surface 20 a of the chamber 20 is adjusted based on different substrate processing process environment conditions.

In an embodiment, the controller 203 may be configured to control the driver 202. The upper surface 20 c of the chamber 20 may be inclined from the bottom surface 20 a when the inside of the reaction space R is formed in the state of vacuum pressure and/or high temperature. The gas supplier 21 coupled to the upper surface 20 c may also be inclined from the bottom surface 20 a and the gas supplier 21 and the bottom surface 20 a of the chamber 20 may form the upper inclination angle a. Here, the controller 203 may be configured to control the driver 202 such that the lower inclination angle b may be adjusted based on the upper inclination angle a

In an embodiment, the controller 203 may control the driver 202 such that the upper inclination angle a is substantially equal to the lower inclination angle b. For example, the controller 203 may control the driver 202 such that the support plate 201 may be inclined with respect to the bottom surface 20 a of the chamber 20 until the first surface 201 a of the support plate 201 and the gas supplier 21 coupled to the upper surface 20 c of the chamber 20 are parallel (that is, until the distances between the first surface 201 a and the gas supplier 21 become uniform).

In an embodiment, the controller 203 may determine whether a difference between the upper inclination angle a and the lower inclination angle b is not within a predefined error range. The error range may be determined from a processor of the substrate processing process to be a certain range, and the error range may be changed as needed. When the difference value between the lower inclination angle b and the upper inclination angle a, which is controlled through the driver 202, is not within a predefined error range, the controller 203 may control the driver 202 again such that the difference value may be within the error range.

In an embodiment, the controller 203 adjusts the lower inclination angle b formed by the support plate 201 based on the upper inclination angle a so that distances between the substrate S seated on the first surface 201 a of the support plate 201 and the gas supplier 21 coupled to the upper surface 20 c of the chamber 20 may be made uniform. For example, the first distance d1 between the first region P1 of the substrate S and the gas supplier 21 may be formed to be substantially equal to the second distance d2 between the second region P2 of the substrate S and the gas supplier 21. Thus, process uniformity of the substrate processing process may be improved.

FIG. 3 is a cross-sectional view of a substrate processing device 300 according to an embodiment.

In an embodiment, the substrate processing device 300 of the disclosure may include a chamber 30, a gas supplier 31, a substrate support assembly 350, an upper angle sensor 32, and a lower angle sensor 33. The technical idea of the chamber 30, the gas supplier 31, and the substrate support assembly 350 of FIG. 3 may include the technical idea of the chamber 20, the gas supplier 21, and the substrate support assembly 250 described with reference to FIG. 2 , and thus the detailed description will be omitted.

Furthermore, the substrate support assembly 350 may include a support plate 301, a driver 302, and a controller 303. The technical idea of the support plate 301, the driver 302, and the controller 303 of FIG. 3 may include the technical idea of the support plate 201, the driver 202, and the controller 203 described with reference to FIG. 2 , and thus the detailed description will be omitted.

In an embodiment, the upper angle sensor 32 of the substrate processing device 300 may be configured to measure the upper inclination angle a. For example, the upper inclination angle a measured by the upper angle sensor 32 may include at least one of an angle formed by the inclination of an upper surface 30 c of the chamber 30 from a reference surface, an angle formed by the inclination of the gas supplier 31 from the reference surface, and an angle formed by the inclination of a shower head in the gas supplier 31 from the reference surface. The reference surface may include, but is not limited to, a bottom surface 30 a of the chamber 30, and may include any one of surfaces formed by components of the substrate processing device 300, which is not substantially deformed in various environment conditions of the substrate processing process.

In an embodiment, the upper angle sensor 32 may communicate with the controller 303. In more detail, the upper angle sensor 32 may communicate with the controller 303 and transmit the measured upper inclination angle a to the controller 303 in real time.

In an embodiment, the lower angle sensor 33 of the substrate processing device 300 may be configured to measure the lower inclination angle b. For example, the lower inclination angle b measured by the lower angle sensor 33 may include at least one of an angle formed by the inclination of a first surface 301 a of the support plate 301 from a reference surface and an angle formed by the inclination of the substrate S on the first surface 301 a from the reference surface. The reference surface may include, but is not limited to, a bottom surface 30 a of the chamber 30, and may include any one of surfaces formed by components of the substrate processing device 300, which is not substantially deformed in various environment conditions of the substrate processing process.

In an embodiment, the lower angle sensor 33 may communicate with the controller 303. In more detail, the lower angle sensor 33 may communicate with the controller 303 and transmit the measured lower inclination angle b to the controller 303 in real time.

In an embodiment, the controller 303 may control the driver 302 based on the upper inclination angle a received from the upper angle sensor 32. In more detail, the controller 303 may control the driver 302 such that the support plate 301 may be inclined from a reference surface based on the upper inclination angle a to form the lower inclination angle b.

In an embodiment, the controller 303 may control the driver 302 to incline the support plate 301 from a reference surface until the lower inclination angle b formed by the support plate 301 is substantially equal to the upper inclination angle a measured by the upper angle sensor 32. The first surface 301 a of the support plate 301 and the gas supplier 31 coupled to the upper surface 30 c of the chamber 30 may be mutually parallel when the lower inclination angle b is substantially equal to the upper inclination angle a. Therefore, distances between the substrate S seated on the first surface 301 a of the support plate 301 and the gas supplier 31 coupled to the upper surface 30 c of the chamber 30 may be made uniform.

In an embodiment, the lower angle sensor 33 may transmit the lower inclination angle b formed by the support plate 301 to the controller 303 after the support plate 301 is inclined from a reference surface by the driver 302.

In an embodiment, the controller 303 may determine whether a difference value between the lower inclination angle b measured by the lower angle sensor 33 and the upper inclination angle a measured by the upper angle sensor 32 is not within a predefined error range. The error range may be determined from a processor of the substrate processing process to a certain value, and the error range may be changed as needed.

In more detail, when the controller 303 determines that the difference value between the lower inclination angle b and the upper inclination angle a is not within the predefined error range, the controller 303 may drive the support plate 301 by secondarily controlling the driver 302. Furthermore, the lower angle sensor 33 may measure the lower inclination angle b secondarily formed by the support plate 301 and may transmit the measured lower inclination angle b to the controller 303. The controller 303 may determine whether a difference value between the measured second lower inclination angle b and the upper inclination angle a is not within the error range. When the difference value between the second lower inclination angle b and the upper inclination angle a is within the error range, the controller 303 may stop the control of the driver 302. In an embodiment, when the difference value between the second lower inclination angle b and the upper inclination angle a is not within the error range, the controller 303 may control the driver 302 to drive the support plate 301 again.

In an embodiment, the first surface 301 a of the support plate 301 may be set to be parallel to the bottom surface 30 a of the chamber 30 (i.e., the lower inclination angle b is substantially close to 0 degrees) before the substrate processing process proceeds. The gas supplier 31 coupled to the upper surface 30 c may be parallel to the bottom surface 30 a of the chamber 30 in a substrate processing process in a case where the upper surface 30 c of the chamber 30 is not inclined toward an inner space of the chamber 30. In other words, the upper inclination angle a formed by the gas supplier 31 and bottom surface 30 a may be substantially 0 degrees. Here, the controller 303 may be configured not to drive the driver 302.

FIG. 4 is a side view of the driver 302 according to an embodiment. FIG. 5 is a plan view of a fixing plate 43 of the driver 302 and FIG. 6 is a plan view of a tilting plate 44 of the driver 302.

In an embodiment, the driver 302 of the disclosure may include a motor 41, a link unit 42, a fixing plate 43, a tilting plate 44, and a connecting arm 45. As described above with reference to FIG. 3 , the driver 302 may drive the support plate 301 such that the first surface 301 a of the support plate 301 is inclined from a reference surface to form the lower inclination angle b.

In an embodiment, the motor 41 may be a power source configured to receive electric power and generate driving force. The driving force of the motor 41 may be transmitted to the link unit 42 to be described later below and used to drive the tilting plate 44. The driver 302 may include a plurality of motors 41.

In an embodiment, the link unit 42 is mechanically connected to the motor 41 and may be configured to be driven in a vertical direction by the driving force of the motor 41. Furthermore, the link unit 42 may be connected to the tilting plate 44 and may transmit the driving force of the motor 41 to the tilting plate 44. The link unit 42 may include a first link 71 (of FIG. 7 ) connected to the motor 41 and a second link 72 (of FIG. 7 ) connected to the tilting plate 44. The technical idea of the first link 71 and the second link 72 will be described in more detail with reference to FIG. 7 .

In an embodiment, the link unit 42 may be between the motor 41 and the tilting plate 44. One area of the link unit 42 may be connected to the motor 41 and another area of the link unit 42 may be connected to the tilting plate 44.

In an embodiment, the link unit 42 may be plural. In more detail, the link units 42 may be formed in a number corresponding to the number of motors 41. For example, when there are three motors 41, three link units 42 may be provided.

Furthermore, The link unit 42 may be connected to a lower surface 44 b of the tilting plate 44 such that the link unit 42 is equally symmetric with respect to a center of the tilting plate 44. For example, when the tilting plate 44 is triangular as shown in FIG. 6 and the link units 42 are three, the link units 42 may be connected to the lower surface 44 b of the tilting plate 44 at an interval of 120 degrees from a center of the tilting plate 44.

In an embodiment, when there are a plurality of link units 42, the controller 303 may individually control the motors 41 respectively coupled to the link units 42. As the link unit 42 and the motor 41 are plural and the controller 303 individually controls the motors 41, the lower inclination angle b formed by the support plate 301 and the bottom surface 30 a of the chamber 30 may be precisely adjusted.

Referring to FIGS. 4 and 5 , the fixing plate 43 may include an upper surface 43 a facing the tilting plate 44 and a lower surface 43 b facing the upper surface 43 a. The fixing plate 43 may be between the tilting plate 44 and the motor 41. The fixing plate 43 may be in the shape of a triangular plate as shown in FIG. 5 . However, the disclosure is not limited thereto, and the fixing plate 43 may have various shapes.

In an embodiment, the fixing plate 43 may include a first hole h1 penetrating a central portion and a second hole h2 penetrating an edge portion. For example, the first hole h1 may be provided at the central portion of the fixing plate 43, and a plurality of second holes h2 may be symmetrically disposed with respect to the center of the fixing plate 43 and may be provided to surround the first hole h1. The second holes h2 may be provided near a vertex of the fixing plate 43 so as to be symmetrical with respect to the center of the fixing plate 43 when the fixing plate 43 is in the shape of a triangular plate.

In an embodiment, the first hole h1 of the fixing plate 43 may provide a space in which devices and wires coupled to a lower portion of the connecting arm 45 may be positioned through the fixing plate 43. For example, a connecting arm driver (not shown) configured to drive the connecting arm 45 and wires electrically connected to the connecting arm driver may be positioned through the first hole h1 of the fixing plate 43.

In an embodiment, the second hole h2 of the fixing plate 43 may form a space in which the link unit 42 may be positioned through the fixing plate 43. The second hole h2 of the fixing plate 43 may be formed to have a size that does not interfere with driving of the link unit 42. For example, when the link unit 42 is driven in a vertical direction in a space formed by the second hole h2 and/or to be inclined from a central axis c (of FIG. 7 ), the driving of the link unit 42 may not be interfered by the fixing plate 43.

Referring to FIGS. 4 and 6 , the tilting plate 44 may include an upper surface 44 a facing the support plate 301 and the lower surface 44 b facing the upper surface 44 a. The tilting plate 44 may be on the fixing plate 43.

In an embodiment, the tilting plate 44 may be in the shape of a triangular plate as shown in FIG. 6 . However, the disclosure is not limited thereto, and the tilting plate 44 may have various shapes. Furthermore, the tilting plate 44 may have substantially the same shape as the shape of the fixing plate 43. For example, when the fixing plate 43 is in the shape of a triangular plate, the tilting plate 44 may also be in the shape of a triangular plate.

In an embodiment, the tilting plate 44 may include a fixing hole h3 penetrating the central portion. The fixing hole h3 may be provided at the central portion of the tilting plate 44 and may provide a space in which the connecting arm 45 to be described later below is inserted and fixed.

In an embodiment, the tilting plate 44 may be connected to the link unit 42. In more detail, the lower surface 44 b of the tilting plate 44 may be connected to the second link 72 (of FIG. 7 ). For example, the tilting plate 44 may be driven integrally with the second link 72. In an embodiment, when the second link 72 is raised or lowered, the tilting plate 44 may be raised or lowered. Furthermore, when the second link 72 is tilted with respect to the central axis c of (of FIG. 7 ) of the first link 71, the tilting plate 44 coupled to the second link 72 may also be inclined with respect to the central axis c.

In an embodiment, the connecting arm 45 may be configured to connect the tilting plate 44 and the support plate 301. In more detail, the connecting arm 45 may be columnar and configured to connect the tilting plate 44 and the support plate 301 between the tilting plate 44 and the support plate 301. The lower portion of the connecting arm 45 may be coupled to the tilting plate 44 and the upper portion of the connecting arm 45 may be coupled to the support plate 301.

FIG. 7 is a cross-sectional view of area A of the driver of FIG. 4 .

Referring to FIG. 7 , the link unit 42 may include the first link 71 and the second link 72. For example, the link unit 42 may include a plurality of first links 71 and a plurality of second links 72 coupled to the first links 71, respectively.

In an embodiment, the first link 71 may be connected to the motor 41 and may be driven in a vertical direction by the driving force of the motor 41. A height formed by the first link 71 driven by the motor 41 in the vertical direction may be controlled by the controller 303.

In an embodiment, the second link 72 may be configured to connect the first link 71 and the tilting plate 44. In more detail, the second link 72 may be connected to the tilting plate 44 at an upper portion thereof. For example, the second link 72 may be fixedly coupled to the tilting plate 44 to be integrated.

In an embodiment, the second link 72 may be joint-coupled to the first link 71 at a lower portion thereof. In more detail, the joint coupling may be joint coupling in which the second link 72 may be driven up and down as the first link 71 is driven up and down, may be rotated with respect to the central axis c of the first link 71, and may be inclined from the central axis c of the first link 71 to form the lower inclination angle b.

As shown in FIG. 7 , the first link 71 and the second link 72 may be ball-joint-coupled. However, the disclosure is not limited thereto. The joint coupling of the first link 71 and the second link 72 may include at least one of various kinds of joint couplings in which the second link 72 may be driven up and down as the first link 71 is driven up and down, may be rotated with respect to the central axis c of the first link 71, and may be inclined from the central axis c of the first link 71 to form the lower inclination angle b. For example, the joint coupling of the first link 71 and the second link 72 may include at least one of ball joint coupling and universal joint coupling.

In an embodiment, as shown in FIG. 3 , when the upper surface 30 c of the chamber 30 is inclined to form the upper inclination angle a with the bottom surface 30 a in the substrate processing process, the controller 303 may control the amount of moving up or down of each of the first links 71 based on the upper inclination angle a. When the first links 71 form different heights, the tilting plate 44 connected to the second links 72 may be inclined from the central axis c to form the lower inclination angle b. The method of joint-coupling the first link 71 and the second link 72 described above may facilitate formation of the lower inclination angle b of the tilting plate 44.

In an embodiment, the controller 303 may control the amount of moving up or down of each of the first links 71 based on the upper inclination angle a such that the substrate S seated on the first surface 301 a of the support plate 301 and the gas supplier 31 coupled to the upper surface 30 c of the chamber 30 may be parallel. In other words, the controller 303 may control the amount of moving up or down of each of the first links 71 based on the upper inclination angle a such that distances between the substrate S seated on the first surface 301 a of the support plate 301 and the gas supplier 31 coupled to the upper surface 30 c of the chamber 30 may become uniform.

In an embodiment, as described above, the link unit 42 may be positioned through the second hole h2 of the fixing plate 43 and the second hole h2 may be formed to have a size that does not interfere with the driving of the link unit 42. For example, when the second link 72 is inclined from the central axis c of the first link 71, the second link 72 may not contact the fixing plate 43.

FIG. 8 is a flowchart illustrating a method (S1000) of driving a substrate support assembly according to an embodiment. The method (S1000) of driving the substrate support assembly 350 of the disclosure may be a method of driving the substrate support assembly 350 of the substrate processing device 300 such that distances between the gas supplier 31 coupled to the upper surface 30 c of the chamber 30 and the substrate S on the support plate 301 are uniform.

Referring to FIG. 8 together with FIG. 3 , the method (S1000) of driving the substrate support assembly 350 may include operation S100 of measuring the upper inclination angle a, operation S200 of transmitting the measured upper inclination angle a to the controller 303, operation S300 of controlling the driver 302 such that the lower inclination angle b is formed based on the upper inclination angle a, operation S400 of measuring the lower inclination angle b, operation S500 of transmitting the measured lower inclination angle b to the controller 303, and operation S600 of determining whether the difference value between the upper inclination angle a and the lower inclination angle b is not within a predefined error range.

The operation S100 of measuring the upper inclination angle a of the disclosure may include measuring the upper inclination angle a through the upper angle sensor 32. As described above, the upper inclination angle a may include at least one of an angle formed by the inclination of the upper surface 30 c of the chamber 30 from a reference surface, an angle formed by the inclination of the gas supplier 31 from the reference surface, and an angle formed by the inclination of a shower head formed in the gas supplier 31 from the reference surface. The reference surface may include, for example, the bottom surface 30 a of the chamber 30.

In an embodiment, the operation S100 of measuring the upper inclination angle a may include, when the upper inclination angle a is changed in real time as a substrate processing process proceeds, measuring the changed upper inclination angle a in real time.

The operation S200 of transmitting the measured upper inclination angle a to the controller 303 of the disclosure may include transmitting the upper inclination angle a measured through the upper angle sensor 32 to the controller 303 in real time. The upper angle sensor 32 may transmit the upper inclination angle a measured by a wired communication method or a wireless communication method to the controller 303.

In an embodiment, the operation S200 of transmitting the measured upper inclination angle a to the controller 303 may include, when the upper inclination angle a is changed in real time as the substrate processing process proceeds, transmitting the changed upper inclination angle a in real time.

The operation S300 of controlling the driver 302 such that the lower inclination angle b is formed based on the upper inclination angle a may include controlling the driver 302 such that the lower inclination angle b formed by the first surface 301 a of the support plate 301 and the bottom surface 30 a of the chamber 30 is adjusted based on the upper inclination angle a.

In an embodiment, the controller 303 may control the driver 302 such that the gas supplier 31 coupled to the upper surface 30 c of the chamber 30 and the first surface 301 a of the support plate 301 are mutually parallel (e.g., such that the upper inclination angle a is substantially equal to the lower inclination angle b). In other words, the controller 303 may control the driver 302 such that distances between the substrate S seated on the first surface 301 a of the support plate 301 and the gas supplier 31 coupled to the upper surface 30 c of the chamber 30 may become uniform. Accordingly, the first distance d1 between the first region P1 of the substrate S and the gas supplier 12 may be formed to be substantially equal to the second distance d2 between the second region P2 different from the first region P1 of the substrate S and the gas supplier 31, which may improve process uniformity of the substrate processing process. The configuration of the driver 302 and the operation of the above-described components are substantially the same as the technical ideas described with reference to FIGS. 2 to 7 , and therefore, a detailed description thereof will be omitted.

The operation S400 of measuring the lower inclination angle b of the disclosure may include measuring the lower inclination angle b through the lower angle sensor 33. As described above, the lower inclination angle b may include at least one of the angle formed by the inclination of the first surface 301 a of the support plate 301 from the reference surface and the angle formed by the inclination of the substrate S on the first surface 301 a from the reference surface. The reference surface may include, for example, the bottom surface 30 a of the chamber 30.

In an embodiment, the operation S400 of measuring the lower inclination angle b may include, when the lower inclination angle b is changed in real time as the substrate processing process proceeds, measuring the changed lower inclination angle b in real time.

The operation S500 of transmitting the measured lower inclination angle b to the controller 303 of the disclosure may include transmitting the lower inclination angle b measured through the lower angle sensor 33 to the controller 303 in real time. The lower angle sensor 33 may transmit the lower inclination angle b measured by a wired communication method or a wireless communication method to the controller 303.

In an embodiment, the operation S500 of transmitting the measured lower inclination angle b to the controller 303 may include, when the lower inclination angle b is changed in real time as the substrate processing process proceeds, transmitting the changed lower inclination angle b in real time.

The operation S600 of determining whether the difference value between the upper inclination angle a and the lower inclination angle b is not within a predefined error range of the disclosure may include determining whether the difference value between the upper inclination angle a measured by the upper angle sensor 32 and the lower inclination angle b measured by the lower angle sensor 33 is not within a predefined error range. The error range may be determined from a processor of the substrate processing process to a certain value, and the error range may be changed as needed.

In an embodiment, when the difference value between the upper inclination angle a and the lower inclination angle b is within the predefined error range, the driving of the substrate support assembly 350 may be terminated.

In an embodiment, when the difference value between the upper inclination angle a and the lower inclination angle b is not within the predefined error range, the operation S300 of controlling the driver 302 to form the lower inclination angle b based on the upper inclination angle a may be performed again. When the lower inclination angle b is changed again by the driver 302, the operation S400 of measuring the lower inclination angle b, the operation S500 of transmitting the measured lower inclination angle b to the controller 303, and the operation S600 of determining whether the difference value between the upper inclination angle a and the lower inclination angle b is not within a predefined error range may proceed again.

Since the method (S1000) of driving the substrate support assembly 350 of the disclosure may change the lower inclination angle b formed by the support plate 301 in real time based on the upper inclination angle a, the distances between the substrate S on the support plate 301 and the gas supplier 31 may become uniform. Accordingly, the method (S1000) of driving the substrate support assembly 350 of the disclosure may improve the process uniformity of the substrate processing process.

It is to be understood that the shape of each portion of the accompanying drawings is illustrative for a clear understanding of the present disclosure. It should be noted that the portions may be modified into various shapes other than the shapes shown.

It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments. While one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure as defined by the following claims. 

What is claimed is:
 1. A plasma generation device, comprising: a plurality of high-frequency power sources configured to supply power to a plurality of plasma generators, respectively; and a plurality of matchers installed between the plurality of high-frequency power sources and the plurality of plasma generators, and configured to respectively match load impedances of the plasma generators with output impedances of the high-frequency power sources, wherein at least one high-frequency power source of the plurality of high- frequency power sources comprises: a high-frequency oscillator configured to oscillate a high-frequency; a directional coupler disposed at a subsequent stage of the high-frequency oscillator, and configured to extract a part of a traveling wave component from the high-frequency oscillator and a part of a reflected wave component from a corresponding matcher of the plurality of matchers; a filter configured to remove a noise signal included in the reflected wave component extracted by the directional coupler; and a power monitor configured to: measure the reflected wave component after passing through the filter and the traveling wave component extracted by the directional coupler and then passed through the filter; and feedback-control the corresponding matcher to reduce a ratio between the reflected wave component and the traveling wave component measured by the power monitor, and wherein the plurality of plasma generators includes buffer structures configured to generate plasma, respectively, and each of the buffer structures includes two first electrodes connected to the high-frequency power source and a second electrode that is disposed between the two first electrodes and grounded.
 2. The substrate support assembly of claim 1, wherein the controller is further configured to determine whether a difference value between the lower inclination angle and the upper inclination angle is not within a predefined error range.
 3. The substrate support assembly of claim 1, wherein the controller is further configured to communicate with at least one of a lower angle sensor configured to measure the lower inclination angle and an upper angle sensor configured to measure the upper inclination angle.
 4. The substrate support assembly of claim 1, wherein the link unit comprises: a first link connected to the motor and configured to be driven in a vertical direction; and a second link connecting the first link and the tilting plate and configured to be tilted with respect to a central axis of the first link, wherein the first link and the second link are joint-coupled.
 5. The substrate support assembly of claim 4, wherein the first link and the second link are coupled to each other by at least one of ball joint coupling and universal joint coupling.
 6. The substrate support assembly of claim 1, wherein the link unit is plural, and each of the link units is disposed to be equally symmetric with respect to a center of the tilting plate.
 7. A substrate processing apparatus, comprising: a process chamber in which a substrate is processed; a gas supplier configured to supply a predetermined process gas into the process chamber; and a plasma generation device comprising: a plurality of high-frequency power sources configured to supply power to a plurality of plasma generators, respectively; and a plurality of matchers installed between the plurality of high-frequency power sources and the plurality of plasma generators, and configured to respectively match load impedances of the plasma generators with output impedances of the high-frequency power sources, wherein at least one high-frequency power source of the plurality of high-frequency power sources comprises: a high-frequency oscillator configured to oscillate a high-frequency; a directional coupler disposed at a subsequent stage of the high-frequency oscillator, and configured to extract a part of a traveling wave component from the high-frequency oscillator and a part of a reflected wave component from a corresponding matcher of the plurality of matchers; a filter configured to remove a noise signal included in the reflected wave component extracted by the directional coupler; and a power monitor configured to: measure the reflected wave component after passing through the filter and the traveling wave component extracted by the directional coupler and then passed through the filter; and feedback-control the corresponding matcher to reduce a ratio between the reflected wave component and the traveling wave component measured by the power monitor, and wherein the plurality of plasma generators includes buffer structures configured to generate plasma, respectively, and each of the buffer structures includes two first electrodes connected to the high-frequency power source and a second electrode that is disposed between the two first electrodes and grounded.
 8. A substrate processing device comprising: a chamber; a substrate support assembly configured to support a substrate in the chamber; and a gas supplier coupled to an upper surface of the chamber and configured to define a reaction space of a reactor together with the substrate support assembly and to supply gas to the reaction space, wherein the substrate support assembly comprises: a support plate comprising a first surface on which the substrate is seated; a driver configured to tilt the support plate such that the first surface is inclined with respect to a reference surface by a lower inclination angle greater than zero and less than 90 degree; and a controller configured to control the driver such that the lower inclination angle is adjusted based on an upper inclination angle greater than zero and less than 90 degree formed by the inclination of the gas supplier with respect to the reference surface, wherein the reference surface is a bottom surface of the chamber, wherein the driver comprises: a motor; a link unit connected to the motor and configured to be driven in a vertical direction; a tilting plate connected to the link unit; and a connecting arm extending from the tilting plate and coupled to the support plate, wherein the substrate processing device further comprises: a lower angle sensor configured to measure the lower inclination angle; and an upper angle sensor configured to measure the upper inclination angle.
 9. The substrate processing device of claim 8, wherein the controller is further configured to control the driver such that the lower inclination angle and the upper inclination angle are equal to each other.
 10. The substrate processing device of claim 8, wherein the controller is further configured to communicate with the lower angle sensor.
 11. The substrate processing device of claim 8, wherein the controller is further configured to communicate with the upper angle sensor.
 12. The substrate processing device of claim 8, wherein the controller is further configured to determine whether a difference value between the lower inclination angle measured by the lower angle sensor and the upper inclination angle measured by the upper angle sensor is not within a predefined error range.
 13. The substrate processing device of claim 8, wherein the link unit comprises: a first link connected to the motor and configured to be driven in a vertical direction first link; and a second link connecting the first link and the tilting plate and configured to be tilted with respect to a central axis of the first link, wherein the first link and the second link are joint-coupled.
 14. The substrate processing device of claim 13, wherein the first link and the second link are coupled to each other by at least one of ball joint coupling and universal joint coupling.
 15. The substrate processing device of claim 8, wherein the link unit is plural, and each of the link units is disposed to be equally symmetric with respect to a center of the tilting plate.
 16. The substrate processing device of claim 15, wherein the controller is further configured to individually control the motors respectively coupled to the link units.
 17. The substrate processing device of claim 8, wherein the driver further comprises: a fixing plate comprising a hole, wherein the fixing plate is between the tilting plate and the motor, and the link unit is connected to the tilting plate through the hole. 